English
简体中文
MOSFET N-CH 900V 2.5A TO251
IC GATE NAND 3CH 3-INP 14SO
DC DC CONVERTER +/-9V 5W
COMP O= .609,L= 1.13,W= .110
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.1Ohm @ 1.25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 748 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 94W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251 (IPAK) |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP60R099C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 22A TO220-3 |
|
STF3N62K3STMicroelectronics |
MOSFET N-CH 620V 2.7A TO220FP |
|
IPB50R140CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 550V 23A TO263-3 |
|
IXFP36N20X3MWickmann / Littelfuse |
MOSFET N-CH 200V 36A TO220 |
|
IPP60R060P7XKSA1Rochester Electronics |
IPP60R060 - 600V COOLMOS N-CHANN |
|
SI7113DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 100V 13.2A PPAK |
|
FDS3682_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF7468PBFRochester Electronics |
MOSFET N-CH 40V 9.4A 8SO |
|
IXTH90P10PWickmann / Littelfuse |
MOSFET P-CH 100V 90A TO247 |
|
RAQ045P01TCRROHM Semiconductor |
MOSFET P-CH 12V 4.5A TSMT6 |
|
BTS282ZE3180ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMTH6016LFVWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 41A POWERDI3333 |
|
RM15P60LDRectron USA |
MOSFET P-CHANNEL 60V 13A TO252-2 |