TOOL BENCH PRESS AUTO 14-24AWG
MOSFET N-CH 30V 7.3A 8SO
IC LED DRVR RGLTR DIM 3A 20TSSOP
SLIT MASK 1X3MM FOR EX-M2
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 7.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 30mOhm @ 7.3A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 550 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SO |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
2SK3747Rochester Electronics |
MOSFET N-CH 1500V 2A TO3PML |
![]() |
EPC2214EPC |
AEC-Q101 GAN FET 80V 20 MOHM |
![]() |
APT1201R6BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 8A TO247 |
![]() |
FCPF16N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 16A TO220F |
![]() |
FDS6670SRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
FQD60N03LTMRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
CSD13381F4Texas Instruments |
MOSFET N-CH 12V 2.1A 3PICOSTAR |
![]() |
R6030JNZC8ROHM Semiconductor |
MOSFET N-CH 600V 30A TO3PF |
![]() |
DMT3020LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 8.4A 6UDFN |
![]() |
FDI045N10ARochester Electronics |
MOSFET N-CH 100V 120A I2PAK-3 |
![]() |
TK7S10N1Z,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 7A DPAK |
![]() |
PMN27UP,115Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
![]() |
IRF9Z34PBF-BE3Vishay / Siliconix |
MOSFET P-CH 60V 18A TO220AB |