English
简体中文
MOSFET P-CH 60V 11A/61A DPAK
DIODE GEN PURP 400V 1A SUB SMA
CONN HEADER SMD 24POS 2.54MM
8D 15C 14#20 1#16 SKT RECP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Ta), 61A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 16mOhm @ 29A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 85 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4.8 nF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 4.1W (Ta), 118W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSC016N06NSTATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 31A/100A TDSON |
|
AON6414AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A/30A 8DFN |
|
FDMS8672SRochester Electronics |
MOSFET N-CH 30V 17A/35A 8PQFN |
|
IRFP150MPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A TO247AC |
|
SIHA22N60AE-E3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 20A TO220 |
|
AOW10N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 10A TO262 |
|
IPA50R800CERochester Electronics |
MOSFET N-CH 500V 5A TO220-FP |
|
IRF630STRLPBFVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |
|
IPI80N06S405AKSA2Rochester Electronics |
MOSFET N-CH 60V 80A TO262-3 |
|
FDP2572Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4A/29A TO220-3 |
|
TK20E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO220 |
|
TK34A10N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 34A TO220SIS |
|
RS1L120GNTBROHM Semiconductor |
MOSFET N-CH 60V 12A/36A 8HSOP |