English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ DM6 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 195mOhm @ 9A, 10V |
| vgs(th) (最大值) @ id: | 4.75V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 940 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 130W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT5010JVRU3Roving Networks / Microchip Technology |
MOSFET N-CH 500V 44A SOT227 |
|
FDP8870-F085Rochester Electronics |
MOSFET N-CH 30V 19A/156A TO220-3 |
|
R8002ANJFRGTLROHM Semiconductor |
MOSFET N-CH 800V 2A LPTS |
|
2SK3709Rochester Electronics |
MOSFET N-CH 100V 37A TO220ML |
|
SI8805EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 8V 4MICROFOOT |
|
DMTH10H010LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |
|
IPD90N06S4L-05Rochester Electronics |
IPD90N06 - 55V-60V N-CHANNEL AUT |
|
RJK03B7DPA-00#J5ARochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
IPB180N10S403ATMA1Rochester Electronics |
MOSFET N-CH 100V 180A TO263-7-3 |
|
IXTT110N10PWickmann / Littelfuse |
MOSFET N-CH 100V 110A TO268 |
|
IPB014N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 34A/180A TO263-7 |
|
FQI6N60CTURochester Electronics |
MOSFET N-CH 600V 5.5A I2PAK |
|
FQD7N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 5.5A DPAK |
