English
简体中文
RES 49.9 OHM 0.1% 1/8W 0805
MOSFET N-CHANNEL 30V 16A 8SO
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SkyFET®, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.5mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 14.3 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1025 pF @ 15 V |
| 场效应管特征: | Schottky Diode (Body) |
| 功耗（最大值）: | 5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TA) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI8489EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 4MICROFOOT |
|
DMN2053U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.5A SOT23 T&R 3 |
|
2V7002LT1G |
MOSFET N-CH 60V 115MA SOT23-3 |
|
CSD18536KTTTexas Instruments |
MOSFET N-CH 60V 200A DDPAK |
|
ISP25DP06NMXTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
IRFB7545PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 95A TO220 |
|
APT34M60S/TRRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A D3PAK |
|
IXTA70N075T2-TRLWickmann / Littelfuse |
MOSFET N-CH 75V 70A TO263 |
|
UPA2718AGR-E2-ATRochester Electronics |
MOSFET P-CH 30V 13A 8PSOP |
|
IPB60R180C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO263-3 |
|
SUP50010E-GE3Vishay / Siliconix |
MOSFET N-CH 60V 150A TO220AB |
|
IXTX550N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 550A PLUS247-3 |
|
HUFA76419P3Rochester Electronics |
MOSFET N-CH 60V 29A TO220-3 |