类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 52A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 5.8mOhm @ 18A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18.2 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1113 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 760mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK3980-TD-ERochester Electronics |
N-CHANNEL MOSFET |
|
SIR846ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
DMTH6010SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 16.3A/70A TO252 |
|
IXFK360N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 360A TO264AA |
|
IPI90R800C3Rochester Electronics |
MOSFET N-CH 900V 6.9A TO262-3 |
|
PSMN012-60MSXNexperia |
MOSFET N-CH 60V 53A LFPAK33 |
|
IRFB17N50LPBFVishay / Siliconix |
MOSFET N-CH 500V 16A TO220AB |
|
FDD6690ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12A/46A DPAK |
|
RTR030P02HZGTLROHM Semiconductor |
MOSFET P-CH 20V 3A TSMT3 |
|
AUIRFR4620IR (Infineon Technologies) |
MOSFET N-CH 200V 24A DPAK |
|
SISA18ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 38.3A PPAK1212-8 |
|
IPT60R102G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 23A 8HSOF |
|
SK8403160LPanasonic |
MOSFET N-CH 30V 18A 8HSSO |