English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ K5 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.1Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.3 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 173 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 20W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FP |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVTFS4C06NWFTWGRochester Electronics |
MOSFET N-CH 30V 21A 8WDFN |
|
SPW17N80C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO247-3 |
|
LND150N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
|
STD15NF10T4STMicroelectronics |
MOSFET N-CH 100V 23A DPAK |
|
STL11N65M5STMicroelectronics |
MOSFET N-CH 650V 8.5A POWERFLAT |
|
SIHA120N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO220 |
|
HUF75345S3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03B8DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
IRF3717TRPBFRochester Electronics |
PFET, 20A I(D), 20V, 0.0044OHM, |
|
SI7370DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
|
STP35N60DM2STMicroelectronics |
MOSFET N-CH 600V 28A TO220 |
|
FQA12N60Rochester Electronics |
MOSFET N-CH 600V 12A TO3P |
|
IRF9610PBF-BE3Vishay / Siliconix |
MOSFET P-CH 200V 1.8A TO220AB |
