CAP CER 1200PF 250V X7R 0603
CAP MICA 24000PF 500V RADIAL
FUSE BRD MNT 500MA 250VAC 2SMD
MOSFET P-CH 60V 3.2A PPAK SO-8
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 3.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 64mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTA10P15T-TRLWickmann / Littelfuse |
MOSFET P-CH 150V 10A TO263 |
|
NP22N055HLE-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFIB41N15DPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
SIHF12N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 12A TO220 |
|
FDMC8360LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/80A POWER33 |
|
BSP149H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
STW62N65M5STMicroelectronics |
MOSFET N-CH 650V 46A TO247 |
|
AUIRF7799L2TRIR (Infineon Technologies) |
MOSFET N-CH 250V 375A DIRECTFET |
|
IRFTS9342TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 5.8A 6TSOP |
|
APT50M65LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 67A TO264 |
|
NTD4809NT4G |
MOSFET N-CH 30V 9.6A/58A DPAK |
|
CSD16413Q5ATexas Instruments |
MOSFET N-CH 25V 24A/100A 8VSON |
|
HUF75939S3STRochester Electronics |
N-CHANNEL POWER MOSFET |