English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1Ohm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 160 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXTH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB13N80K5STMicroelectronics |
MOSFET N-CH 800V 12A D2PAK |
|
AOV20S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 3.6A/18A 4DFN |
|
APT34F60S/TRRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A D3PAK |
|
STD4NK80Z-1STMicroelectronics |
MOSFET N-CH 800V 3A IPAK |
|
AOI7S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO251A |
|
SKI03087Sanken Electric Co., Ltd. |
MOSFET N-CH 30V 40A TO263 |
|
SQS423EN-T1_BE3Vishay / Siliconix |
MOSFET P-CH 30V 16A POWERPAK1212 |
|
APT9M100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 9A TO247 |
|
CDM3-800 TR13 PBFREECentral Semiconductor |
MOSFET N-CH 800V 3A DPAK |
|
CSD18540Q5BTexas Instruments |
MOSFET N-CH 60V 100A 8VSON |
|
IRFR5305TRLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
APT10045LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 23A TO264 |
|
IRLS3036PBFRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |
