English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 37mOhm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 250 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TSMT3 |
| 包/箱: | SC-96 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK2413-T-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS6690ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10A 8SOIC |
|
NVD4804NT4GRochester Electronics |
MOSFET N-CH 30V 14.5A/124A DPAK |
|
IRFR220TRRPBFVishay / Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
|
NTMS4177PR2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 6.6A 8SOIC |
|
IRL100HS121Rochester Electronics |
IRL100HS121 - 12V-300V N-CHANNEL |
|
DMTH10H015SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |
|
IXFN90N85XWickmann / Littelfuse |
MOSFET N-CH 850V 90A SOT227B |
|
NTMFS4983NFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A/106A 5DFN |
|
NTMFS4925NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.7A/48A 5DFN |
|
SIJA72ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 27.9A/96A PPAK |
|
NTE2378NTE Electronics, Inc. |
MOSFET N-CHANNEL 900V 5A TO3P |
|
DMNH45M7SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 220A TO220AB |
