English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 730mOhm @ 200mA, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.2 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 16 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.25W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 0806 |
| 包/箱: | PowerPAK® 0806 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPLK60R1K0PFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 5.2A THIN-PAK |
|
2N6660Roving Networks / Microchip Technology |
MOSFET N-CH 60V 410MA TO39 |
|
NP60N055VUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 60A TO252-3 |
|
IPW65R190CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO247-3 |
|
DMN63D8LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 380MA SOT323 |
|
AUIRF3315SRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
SSM3K341TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 6A UFM |
|
AOD2922Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 3.5A/7A TO252 |
|
RSF014N03TLROHM Semiconductor |
MOSFET N-CH 30V 1.4A TUMT3 |
|
BSC027N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 23A/100A TSON |
|
DMN2053UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.9A SOT323 |
|
PSMN5R0-100ES,127Rochester Electronics |
MOSFET N-CH 100V 120A I2PAK |
|
ES6U41T2RROHM Semiconductor |
MOSFET N-CH 30V 1.5A 6WEMT |
