类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 11.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10mOhm @ 11.5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2246 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 940mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI3333-8 |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQP90P06-07L_GE3Vishay / Siliconix |
MOSFET P-CH 60V 120A TO220AB |
|
SIHFPS40N60K-GE3Vishay / Siliconix |
POWER MOSFET SUPER-247, 130 M @ |
|
SI3851DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 1.6A 6TSOP |
|
R6006ANXROHM Semiconductor |
MOSFET N-CH 600V 6A TO220FM |
|
IRLR014TRPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
FDP20N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 20A TO220-3 |
|
DMP2077UCA3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4A X4-DSN1006-3 |
|
IXFH22N60PWickmann / Littelfuse |
MOSFET N-CH 600V 22A TO247AD |
|
TPN2R203NC,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 45A 8TSON |
|
DMTH6016LFDFWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 9.4A 6UDFN |
|
DMP2066LDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.6A SOT-26 |
|
R6008ANXROHM Semiconductor |
MOSFET N-CH 600V 8A TO-220FM |
|
SSM3J352F,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 2A S-MINI |