类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 52mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2360 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 107W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF730BPBFVishay / Siliconix |
MOSFET N-CH 400V 6A TO220AB |
|
NTMFS4941NT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 9 |
|
AUIRFS8403Rochester Electronics |
MOSFET N-CH 40V 123A D2PAK |
|
SUM60030E-GE3Vishay / Siliconix |
MOSFET N-CH 80V 120A TO263 |
|
HUFA75652G3Rochester Electronics |
MOSFET N-CH 100V 75A TO247-3 |
|
SFT1342-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A TP-FA |
|
IXTA86N20X4Wickmann / Littelfuse |
MOSFET 200V 86A N-CH ULTRA TO263 |
|
AON6268Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 44A 8DFN |
|
NTD20N06LGRochester Electronics |
MOSFET N-CH 60V 20A DPAK |
|
HUF76423P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 35A TO220-3 |
|
IPI50R140CPRochester Electronics |
MOSFET N-CH 550V 23A TO262-3 |
|
PMV45EN2RNexperia |
MOSFET N-CH 30V 4.1A TO236AB |
|
IPAN80R360P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 13A TO220 |