English
简体中文
MOSFET N-CH 100V 13A/50A PWRDI
IC DRAM 1GBIT PARALLEL 78FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta), 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2361 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta), 30W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI3333-8 |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTN660N04T4Wickmann / Littelfuse |
MOSFET N-CH 40V 660A SOT227B |
|
IPS80R600P7AKMA1Rochester Electronics |
MOSFET N-CH 800V 8A TO251-3-342 |
|
STL7N6F7STMicroelectronics |
MOSFET N-CH 60V 7A POWERFLAT |
|
STW10N95K5STMicroelectronics |
MOSFET N-CH 950V 8A TO247 |
|
IPD80R2K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 2.5A TO252-3 |
|
STP4N90K5STMicroelectronics |
MOSFET N-CH 900V 3A TO220 |
|
HAT1043M-EL-ERochester Electronics |
4.4A, 20V, P-CHANNEL MOSFET |
|
FQP2P25Rochester Electronics |
MOSFET P-CH 250V 2.3A TO220-3 |
|
DMG2302U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.2A SOT23-3 |
|
STL100N6LF6STMicroelectronics |
MOSFET N CH 60V 100A PWRFLAT 5X6 |
|
CSD23202W10TTexas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |
|
IPA60R520C6XKSA1Rochester Electronics |
PFET, 8.1A I(D), 600V, 0.52OHM, |
|
RUM003N02T2LROHM Semiconductor |
MOSFET N-CH 20V 300MA VMT3 |