English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 31 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2516 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPP07N65C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 7.3A TO220-3 |
|
APT18M80BRoving Networks / Microchip Technology |
MOSFET N-CH 800V 19A TO247 |
|
FDP090N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 75A TO220-3 |
|
US5U30TRROHM Semiconductor |
MOSFET P-CH 20V 1A TUMT5 |
|
IXTA100N04T2-TRLWickmann / Littelfuse |
MOSFET N-CH 40V 100A TO263 |
|
STF5N60M2STMicroelectronics |
MOSFET N-CH 600V 3.7A TO220FP |
|
RS1E320GNTBROHM Semiconductor |
MOSFET N-CH 30V 32A 8HSOP |
|
BSC094N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 60V 47A 8TDSON |
|
TK60S06K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 60A DPAK |
|
NTD24N06LT4Rochester Electronics |
MOSFET N-CH 60V 24A DPAK |
|
RFP15P05Rochester Electronics |
MOSFET P-CH 50V 15A TO220-3 |
|
IRF9Z24STRRPBFVishay / Siliconix |
MOSFET P-CH 60V 11A D2PAK |
|
SQ2398ES-T1_BE3Vishay / Siliconix |
MOSFET N-CH 100V 1.6A SOT23-3 |
