English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVI |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 103mOhm @ 1.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 4.7 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 290 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | CST3B |
| 包/箱: | 3-SMD, No Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN1R2-25YLDXNexperia |
MOSFET N-CH 25V 100A LFPAK56 |
|
SMP3003-DL-ERochester Electronics |
MOSFET P-CH 75V 100A SMP-FD |
|
STP4NK50ZDSTMicroelectronics |
MOSFET N-CH 500V 3A TO220AB |
|
IPB025N10N3GE8187ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO263-7 |
|
FCH104N60Rochester Electronics |
MOSFET N-CH 600V 37A TO247-3 |
|
SI7880ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
RM20N60LDRectron USA |
MOSFET N-CHANNEL 60V 20A TO252-2 |
|
IRFR024TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
DMT43M8LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 87A POWERDI3333 |
|
IRLR120TRVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
STL42P6LLF6STMicroelectronics |
MOSFET P-CH 60V 42A POWERFLAT |
|
BSC080N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 13A/53A TDSON |
|
CSD13306WTexas Instruments |
MOSFET N-CH 12V 3.5A 6DSBGA |
