English
简体中文
MOSFET N-CH 600V 4.5A IPAK
DIODE GEN PURP 400V 500MA DO213
DIODE SBR 45V 12A DO201AD
AC/DC DESKTOP ADAPTER 12V 60W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperFET® II |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 900mOhm @ 2.3A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 710 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 52W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMSD6N303R2Rochester Electronics |
MOSFET N-CH 30V 6A 8SOIC |
|
RCJ120N20TLROHM Semiconductor |
MOSFET N-CH 200V 12A LPTS |
|
STD11N50M2STMicroelectronics |
MOSFET N-CH 500V 8A DPAK |
|
IRF9Z34STRLPBFVishay / Siliconix |
MOSFET P-CH 60V 18A D2PAK |
|
IXTP86N20X4Wickmann / Littelfuse |
MOSFET 200V 86A N-CH ULTRA TO220 |
|
FKI07174Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 31A TO220F |
|
CSD17501Q5ATexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
R8008ANJFRGTLROHM Semiconductor |
MOSFET N-CH 800V 8A LPTS |
|
RQ6L020SPTCRROHM Semiconductor |
MOSFET P-CH 60V 2A TSMT6 |
|
STU6N65K3STMicroelectronics |
MOSFET N-CH 650V 5.4A IPAK |
|
CSD15571Q2Texas Instruments |
MOSFET N-CH 20V 22A 6SON |
|
FQAF9P25Rochester Electronics |
MOSFET P-CH 250V 7.1A TO3PF |
|
RFD16N05LSM_NLRochester Electronics |
N-CHANNEL POWER MOSFET |