English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 13V |
| rds on (max) @ id, vgs: | 500mOhm @ 2.3A, 13V |
| vgs(th) (最大值) @ id: | 3.5V @ 200µA |
| 栅极电荷 (qg) (max) @ vgs: | 18.7 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 433 pF @ 100 V |
| 场效应管特征: | Super Junction |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDBL0200N100Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 300A 8HPSOF |
|
STW68N65DM6-4AGSTMicroelectronics |
MOSFET N-CH 650V 72A TO247-4 |
|
FQB3N60CTMRochester Electronics |
MOSFET N-CH 600V 3A D2PAK |
|
IRF6646TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 12A DIRECTFET |
|
RM4N650TIRectron USA |
MOSFET N-CHANNEL 650V 4A TO220F |
|
TK39N60W5,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 38.8A TO247 |
|
SIHS36N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 36A SUPER-247 |
|
2SK3564(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 3A TO220SIS |
|
NTHL050N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 58A TO247-3 |
|
IPP80N06S208AKSA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STP9NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 7A TO220FP |
|
SI7145DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
SQD07N25-350H_GE3Vishay / Siliconix |
MOSFET N-CH 250V 7A TO252AA |
