类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 40mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3500 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 65W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252-2 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN2R0-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
NTMFS6D1N08HT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 17A/89A 5DFN |
|
NTTFS5C454NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 20A/85A 8WDFN |
|
FDS3590Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 6.5A 8SOIC |
|
FQPF22P10Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 13.2A TO220F |
|
AOT280LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 20.5A/140A TO220 |
|
IXFH14N80PWickmann / Littelfuse |
MOSFET N-CH 800V 14A TO247AD |
|
IPP220N25NFDRochester Electronics |
MOSFET N-CH 250V 61A TO220-3 |
|
TK8A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 8A TO220SIS |
|
SIHB24N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A D2PAK |
|
3LN01M-TL-HRochester Electronics |
MOSFET N-CH 30V 150MA SC70/MCPH3 |
|
SIR170DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 23.2A/95A PPAK |
|
FQD2N100TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1000V 1.6A DPAK |