MOSFET N-CH 30V 2.2A SOT89
DIODE GEN PURP 400V 500MA SUBSMA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 2.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 120mOhm @ 2.5A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 186 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 970mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-89-3 |
包/箱: | TO-243AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UPA654TT-E1-ARochester Electronics |
MOSFET P-CH 12V 6WSOF |
|
AON6502Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 49A/85A 8DFN |
|
IPB180N04S4H0ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7-3 |
|
SQD50N04-5M6L_GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO252AA |
|
STB36N60M6STMicroelectronics |
MOSFET N-CH 600V 30A D2PAK |
|
SQ4840EY-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 20.7A 8SO |
|
IXFT340N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 340A TO268 |
|
BUK664R4-55C,118Nexperia |
MOSFET N-CH 55V 100A D2PAK |
|
NTE2934NTE Electronics, Inc. |
MOSFET N-CH 400V 11.5A TO3PML |
|
SI2319DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 40V 2.3A SOT23-3 |
|
NDF11N50ZGRochester Electronics |
MOSFET N-CH 500V 12A TO220FP |
|
APT10035LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 28A TO264 |
|
PSMN2R0-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |