English
简体中文
MOSFET N-CH 400V 1.6A TO220F
CONN HEADER VERT 10POS 1.27MM
.050 CABLE PLUG
CAP TRIM 5.5-18PF 200V CHAS MNT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 400 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.4Ohm @ 800mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.5 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 230 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 20W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD6N40-001Rochester Electronics |
NFET DPAK 400V 1.1R |
|
FDS7764ARochester Electronics |
MOSFET N-CH 30V 15A 8SOIC |
|
FQB6N60TMRochester Electronics |
MOSFET N-CH 600V 6.2A D2PAK |
|
RM138Rectron USA |
MOSFET N-CHANNEL 50V 220MA SOT23 |
|
NTMFS4825NFET1GRochester Electronics |
MOSFET N-CH 30V 17A/171A 5DFN |
|
BUK954R8-60E,127Rochester Electronics |
MOSFET N-CH 60V 100A TO220AB |
|
IRFPS3810PBFRochester Electronics |
MOSFET N-CH 100V 170A SUPER-247 |
|
STF18N65M2STMicroelectronics |
MOSFET N-CH 650V 12A TO220FP |
|
IPB80N06S2H5ATMA2Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
CDM4-650 TR13 PBFREECentral Semiconductor |
MOSFET N-CH 650V 4A DPAK |
|
IPLU250N04S41R7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 250A 8HSOF |
|
STP75NF20STMicroelectronics |
MOSFET N-CH 200V 75A TO220AB |
|
SI4425DYRochester Electronics |
P-CHANNEL MOSFET |