CAP CER 1800PF 50V U2J 0603
MOSFET N-CH 600V 30A TO220
类型 | 描述 |
---|---|
系列: | E |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 100mOhm @ 13A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1851 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 35W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 Full Pack |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCPF150N65FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 14.9A TO220F |
|
AOTF6N90Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 900V 6A TO220-3F |
|
NTB6412ANGRochester Electronics |
MOSFET N-CH 100V 58A D2PAK |
|
DMT6015LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI3333 |
|
EPC2204EPC |
TRANS GAN 100V DIE 5.6MOHM |
|
GKI10194Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 7A 8DFN |
|
FDB14N30TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 14A D2PAK |
|
RRR030P03TLROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT3 |
|
SQJ479EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 80V 32A PPAK SO-8 |
|
TK10S04K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 10A DPAK |
|
IRFD210PBFVishay / Siliconix |
MOSFET N-CH 200V 600MA 4DIP |
|
NTD95N02RGRochester Electronics |
MOSFET N-CH 24V 12A/32A DPAK |
|
C3M0280090J-TRWolfspeed - a Cree company |
SICFET N-CH 900V 11A D2PAK-7 |