English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 95A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 3.3mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 98 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3174 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 4.3W (Ta), 94W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TDSON-8-10 |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FCH165N60ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 23A TO247-3 |
|
NTLJF3117PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.3A 6WDFN |
|
IPW60R125P6Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
STD5N20LT4STMicroelectronics |
MOSFET N-CH 200V 5A DPAK |
|
STP22N60DM6STMicroelectronics |
MOSFET N-CH 600V 15A TO220 |
|
BUK653R2-55C,127Rochester Electronics |
PFET, 120A I(D), 55V, 0.0048OHM, |
|
SFT1345-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 11A TP-FA |
|
2SK1315L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRF3205IR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
2SJ661-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A TO262-3 |
|
BUK663R5-30C,118Rochester Electronics |
MOSFET N-CH 30V 100A D2PAK |
|
SI3437DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 1.4A 6TSOP |
|
SIHG47N60AEL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AC |
