English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSC0908NSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB70N08TMRochester Electronics |
MOSFET N-CH 80V 70A D2PAK |
|
AOB240LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 20A/105A TO263 |
|
IRLR2703TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 23A DPAK |
|
ZXMP6A17GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 3A SOT223 |
|
RW1C015UNT2RROHM Semiconductor |
MOSFET N-CH 20V 1.5A 6WEMT |
|
FQU5P20TUSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 3.7A IPAK |
|
FDMC86520LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 13.5A/22A 8MLP |
|
IRFH5007TR2PBFRochester Electronics |
MOSFET N-CH 75V 17A/100A 8PQFN |
|
2SK4177-DL-1ERochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
FQD5N40TMRochester Electronics |
MOSFET N-CH 400V 3.4A DPAK |
|
IRF1010ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
STW40N65M2STMicroelectronics |
MOSFET N-CH 650V 32A TO247 |
