类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 6.3A (Ta), 21A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 32mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 20µA |
栅极电荷 (qg) (max) @ vgs: | 6.9 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 370 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 31W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-WDFN (3.3x3.3) |
包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DI080N03PQDiotec Semiconductor |
MOSFET N-CH 30V 80A 8QFN |
|
STP10NK70ZFPSTMicroelectronics |
MOSFET N-CH 700V 8.6A TO220FP |
|
BSC009NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 41A/100A TDSON |
|
IPB80N03S4L03ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO263-3 |
|
PMV48XPA215Rochester Electronics |
P-CHANNEL MOSFET |
|
DMN60H3D5SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 2.8A TO252 |
|
APT43F60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 45A T-MAX |
|
IRF9240Rochester Electronics |
HEXFET POWER MOSFET |
|
BUK98150-55/CU135Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MTM231232LBFPanasonic |
MOSFET P-CH 20V 3A SMINI3-G1-B |
|
IPP60R099P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A TO220-3 |
|
BUK7S0R7-40HJNexperia |
MOSFET N-CH 40V 425A LFPAK88 |
|
BUZ323Rochester Electronics |
N-CHANNEL POWER MOSFET |