MOSFET N-CH 650V 22A TO220AB
MOSFET N-CH 25V 33A LFPAK56
RES SMD 53.6OHM 0.25% 1/16W 0402
DIODE ZENER 10V 250MW TO236AB
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 12.6mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 1.95V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 8.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 528 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 26W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK56, Power-SO8 |
包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCP190N65S3Rochester Electronics |
POWER MOSFET, N-CHANNEL, SUPERFE |
|
RV8L002SNHZGG2CRROHM Semiconductor |
MOSFET N-CH 60V 250MA DFN1010-3W |
|
R6009JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 9A LPTS |
|
R6009JNXC7GROHM Semiconductor |
MOSFET N-CH 600V 9A TO220FM |
|
IXFB40N110PWickmann / Littelfuse |
MOSFET N-CH 1100V 40A PLUS264 |
|
BTS112ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3573-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT34F100B2Roving Networks / Microchip Technology |
MOSFET N-CH 1000V 35A T-MAX |
|
AON6282Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 26.5A/85A 8DFN |
|
IRL640STRRPBFVishay / Siliconix |
MOSFET N-CH 200V 17A D2PAK |
|
MCQ4410-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 7.5A 8SOP |
|
FDMC012N03Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 35A/185A POWER33 |
|
FQU2N60CTURochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |