English
简体中文
MOSFET P-CH 20V 5.3A 8SO
MOSFET N-CH 50V 200MA SOT23-3
DIODE GEN PURP 600V 15A TO220FP
24P VAL-U-LOK HCS VRTHDR W/PGS G
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 50 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.5Ohm @ 220mA, 10V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 50 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFA44N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 44A TO263 |
|
CSD18513Q5ATTexas Instruments |
MOSFET N-CH 40V 124A 8VSON |
|
NDS0605Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 180MA SOT-23 |
|
IRF620Rochester Electronics |
5.0A 200V 0.800 OHM N-CHANNEL |
|
SIHA17N80E-E3Vishay / Siliconix |
MOSFET N-CHANNEL 800V 15A TO220 |
|
FQT1N60CTF-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 200MA SOT223-4 |
|
STW26NM60NDSTMicroelectronics |
MOSFET N-CH 600V 21A TO247 |
|
IXTA1N100P-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 1A TO263 |
|
RJK03N6DPA-00#J5ARochester Electronics |
MOSFET N-CH 30V 40A 8WPAK |
|
NDF10N60ZGRochester Electronics |
MOSFET N-CH 600V 10A TO220FP |
|
IXTP10P15TWickmann / Littelfuse |
MOSFET P-CH 150V 10A TO220AB |
|
SPP03N60S5XKSA1Rochester Electronics |
MOSFET N-CH 600V 3.2A TO220-3 |
|
IRFAE42Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |