类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 150mOhm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 280 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta), 28.8W (Tj) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SPA08N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A TO220-FP |
![]() |
NTHL060N090SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 900V 46A TO247-3 |
![]() |
STWA65N65DM2AGSTMicroelectronics |
MOSFET N-CH 650V 60A TO247 |
![]() |
ND2012LRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
![]() |
PMH550UNEHNexperia |
MOSFET N-CH 30V 770MA DFN0606-3 |
![]() |
NTD4970NT4GRochester Electronics |
MOSFET N-CH 30V 8.5A/36A DPAK |
![]() |
RFD16N05_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IPP80N08S207AKSA1Rochester Electronics |
MOSFET N-CH 75V 80A TO220-3-1 |
![]() |
SIHG73N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 73A TO247AC |
![]() |
IPD60R460CEATMA1Rochester Electronics |
MOSFET N-CH 600V 9.1A TO252-3 |
![]() |
IRF2807PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 82A TO220AB |
![]() |
BUK9Y19-55B,115Nexperia |
MOSFET N-CH 55V 46A LFPAK56 |
![]() |
2SK1520-ERochester Electronics |
N-CHANNEL POWER MOSFET |