English
简体中文
CAP CER 6800PF 25V C0G/NP0 1206
TVS DIODE 28V 45.4V DO214AB
MOSFET N-CH 1500V 4A TO247-3
CABLE 2COND 16AWG BLACK/RED 153M
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerMESH™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 160W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP60R210CFD7XKSA1IR (Infineon Technologies) |
MOSFET N CH |
|
FQAF10N80Rochester Electronics |
MOSFET N-CH 800V 6.7A TO3PF |
|
IXFA10N80PWickmann / Littelfuse |
MOSFET N-CH 800V 10A TO263 |
|
IPW60R199CPRochester Electronics |
16A, 600V, 0.199OHM, N-CHANNEL M |
|
SISH536DN-T1-GE3Vishay / Siliconix |
N-CHANNEL 30 V (D-S) MOSFET POWE |
|
IRFZ44RPBFVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
BSC0901NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |
|
IPAN65R650CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.1A TO220 |
|
AUIRFR5505-IRRochester Electronics |
PFET, 18A I(D), 55V, 0.11OHM, 1O |
|
IRFPS38N60LPBFVishay / Siliconix |
MOSFET N-CH 600V 38A SUPER247 |
|
IRF9530NSTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 14A D2PAK |
|
DMN601K-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 300MA SOT23-3 |
|
APT7M120BRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 8A TO247 |