English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 7mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 72 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 3.9 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.8W (Ta), 120W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STE40NC60STMicroelectronics |
MOSFET N-CH 600V 40A ISOTOP |
|
SIHH080N60E-T1-GE3Vishay / Siliconix |
E SERIES POWER MOSFET POWERPAK 8 |
|
IPP80N06S4L05AKSA1Rochester Electronics |
MOSFET N-CH 60V 80A TO220-3 |
|
SQD70140EL_GE3Vishay / Siliconix |
MOSFET N-CH 100V 30A TO252AA |
|
BSL372SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 100V 2A TSOP6-6 |
|
IPI80N06S207AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3-1 |
|
DMP6110SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CHANNEL 60V 7.8A 8SO |
|
NTTFS4800NTAGRochester Electronics |
MOSFET N-CH 30V 5A/32A 8WDFN |
|
MSJP20N65-BPMicro Commercial Components (MCC) |
MOSFET N-CH TO220AB |
|
TSM4NB60CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO252 |
|
SISS06DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 47.6/172.6A PPAK |
|
PMG370XN,115Rochester Electronics |
MOSFET N-CH 30V 960MA 6TSSOP |
|
SIHB20N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 19A D2PAK |
