English
简体中文
CRYSTAL 20.0000MHZ 17PF SMD
N-CHANNEL LOGIC LEVEL ULTRAFET P
MOSFET N-CH 40V 100A TO220AB
CONN HEADER VERT 4POS 2.54MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 4mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 97 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5708 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 203W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRFR5305TRLIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
STB11NK50ZT4STMicroelectronics |
MOSFET N-CH 500V 10A D2PAK |
|
R6030KNXC7ROHM Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
|
BSM600C12P3G201ROHM Semiconductor |
SICFET N-CH 1200V 600A MODULE |
|
SPA20N60C3Rochester Electronics |
MOSFET N-CH 600V 20.7A TO220-111 |
|
AUIRFP1405-203Rochester Electronics |
AUIRFP1405 - 55V-60V N-CHANNEL A |
|
IPD90N04S403ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-3 |
|
SIA431DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
|
BSC024NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 25A/100A TDSON |
|
SD213DE TO-72 4LLinear Integrated Systems, Inc. |
HIGH SPEED N-CHANNEL LATERAL DMO |
|
PHP45NQ10T,127Nexperia |
MOSFET N-CH 100V 47A TO220AB |
|
TPN4R806PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 72A 8TSON |
|
FQD4N25TMRochester Electronics |
MOSFET N-CH 250V 3A DPAK |