







MOSFET N-CH 600V 22A TO247-3
DIODE GEN PURP 800V 1.5A DO204AC
IC FRAM 16KBIT SPI 16MHZ 8SOIC
EMITTER UV 387NM 30A MODULE
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 280mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3570 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 370W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
ZXMN6A11GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.1A SOT223 |
|
|
IPL60R360P6SATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11.3A 8THINPAK |
|
|
FDPF770N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 10A TO220F |
|
|
RQ6E085BNTCRROHM Semiconductor |
MOSFET N-CH 30V 8.5A SOT457 |
|
|
IRF840ALPBFVishay / Siliconix |
MOSFET N-CH 500V 8A I2PAK |
|
|
BUK7905-40AI,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.005OHM, 1 |
|
|
NTB75N03RT4Rochester Electronics |
MOSFET N-CH 25V 9.7A/75A D2PAK |
|
|
FDMC86102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7A/20A POWER33 |
|
|
IRF7853TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.3A 8SO |
|
|
EPC2045EPC |
GANFET N-CH 100V 16A DIE |
|
|
IXTA44P15T-TRLWickmann / Littelfuse |
MOSFET P-CH 150V 44A TO263 |
|
|
IPL60R065P7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 41A 4VSON |
|
|
AUIRF7647S2TRIR (Infineon Technologies) |
MOSFET N-CH 100V 5.9A DIRECTFET |