English
简体中文
FUSE CARTRIDGE 1.6A 300VAC
MOSFET N-CH 100V 140A TO220AB
SMA-SJB/HDBNC-SJ G316 1.5M
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 140A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 111.7 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8474 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 187W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FCI7N60Rochester Electronics |
MOSFET N-CH 600V 7A I2PAK |
|
IRLR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
DMG2302UKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 T&R 3 |
|
IRFU5505PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A IPAK |
|
TSM60NB1R4CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 3A TO251 |
|
AUIRFS8409Rochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
STL135N8F7AGSTMicroelectronics |
MOSFET N-CH 80V 130A POWERFLAT |
|
SIHB22N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A D2PAK |
|
PMPB10XNE,115Nexperia |
MOSFET N-CH 20V 9A DFN2020MD-6 |
|
NVR4003NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 500MA SOT23 |
|
SIHFR430ATRL-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5A DPAK |
|
AOB266LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 18A/140A TO263 |
|
IRFR9220TRLPBFVishay / Siliconix |
MOSFET P-CH 200V 3.6A DPAK |