English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 23mOhm @ 7A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 934 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB80NF55L-06T4STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
|
SI4894BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8.9A 8SO |
|
IRF7452TRPBFRochester Electronics |
PFET, 4.5A I(D), 100V, 0.06OHM, |
|
IRF9231Rochester Electronics |
6.5A, 150V, 0.8OHM, P-CHANNEL PO |
|
NTD6416ANL-1GRochester Electronics |
MOSFET N-CH 100V 19A IPAK |
|
STP80NF55-08STMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
SUM70040M-GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO263-7 |
|
IRFS7434TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
|
MCH3474-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 4A SC70FL/MCPH3 |
|
IPU80R2K8CEAKMA1Rochester Electronics |
MOSFET N-CH 800V 1.9A TO251-3 |
|
IPB100N04S204ATMA4Rochester Electronics |
MOSFET N-CH 40V 100A TO263-3-2 |
|
SUM110N04-03P-E3Vishay / Siliconix |
MOSFET N-CH 40V 110A TO263 |
|
IRFS7430TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
