English
简体中文
CAP TANT 22UF 10% 20V 2312
MOSFET N-CH 40V 100A PWRDI5060-8
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.8mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 79.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6968 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.03W |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI5060-8 (Type K) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPP07N600S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
EPC2039EPC |
GANFET N-CH 80V 6.8A DIE |
|
IPI50R399CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9A TO262-3 |
|
SFP9Z24Rochester Electronics |
MOSFET P-CH 60V 9.7A TO220-3 |
|
DMN61D8LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 470MA SOT23 |
|
APT5015BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 32A TO247 |
|
HUF75545S3Rochester Electronics |
MOSFET N-CH 80V 75A I2PAK |
|
IPD50R1K4CEBTMA1Rochester Electronics |
MOSFET N-CH 500V 3.1A TO252-3 |
|
FCP190N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 17A TO220-3 |
|
FQP20N06TSTURochester Electronics |
MOSFET N-CH 60V 20A TO220-3 |
|
NTAT6H406NT4GRochester Electronics |
MOSFET N-CH 80V 175A ATPAK |
|
NVMFS5C410NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
FDN361BNSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.4A SUPERSOT3 |