类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMZ600UNELYLNexperia |
MOSFET N-CH 20V 600MA DFN1006-3 |
|
ISL9N307AS3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK7520-100A,127Rochester Electronics |
PFET, 63A I(D), 100V, 0.02OHM, 1 |
|
ZXMP10A17E6QTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 1.3A SOT26 |
|
NTD4858NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.2A/73A DPAK |
|
PSMN4R3-30BL,118Nexperia |
MOSFET N-CH 30V 100A D2PAK |
|
SCT2280KECROHM Semiconductor |
SICFET N-CH 1200V 14A TO247 |
|
SSW4N60BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO6420Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 4.2A 6TSOP |
|
APL602LGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A TO264 |
|
EPC2024EPC |
GANFET NCH 40V 60A DIE |
|
SUD19N20-90-BE3Vishay / Siliconix |
MOSFET N-CH 200V 19A DPAK |
|
PMK50XP,518Nexperia |
MOSFET P-CH 20V 7.9A 8SO |