English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 160mOhm @ 1.9A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 190 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK96180-100A,118Rochester Electronics |
MOSFET N-CH 100V 11A D2PAK |
|
PSMN7R5-30MLDXNexperia |
MOSFET N-CH 30V 57A LFPAK33 |
|
TSM10N80CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 9.5A ITO220AB |
|
CSD18511KTTTTexas Instruments |
MOSFET N-CH 40V 110A/194A DDPAK |
|
SISH402DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 19A/35A PPAK |
|
BUK9Y15-60E,115Nexperia |
MOSFET N-CH 60V 53A LFPAK56 |
|
NVMFS5C612NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
STP3N62K3STMicroelectronics |
MOSFET N-CH 620V 2.7A TO220AB |
|
APT8014L2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 52A 264 MAX |
|
FCPF9N60NTYDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9A TO220F-3 |
|
RM25P30S8Rectron USA |
MOSFET P-CHANNEL 30V 25A 8SOP |
|
NVMTS0D7N04CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 51A/430A 8DFNW |
|
HUFA76423D3STRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
