English
简体中文
MOSFET P-CH 40V 2.9A SOT26
DIODE GEN PURP 200V 1A SOD123FL
TERM BLK MARSHALLING 128POS GRAY
SHAPEOKO XXL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 80mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 833 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-26 |
| 包/箱: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK12A53D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 525V 12A TO220SIS |
|
FCD5N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.6A DPAK |
|
IRF830PBFVishay / Siliconix |
MOSFET N-CH 500V 4.5A TO220AB |
|
2SJ350Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
SPD18P06PGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 18.6A TO252-3 |
|
SISA04DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8 |
|
DMP2066LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.5A SOT26 |
|
APT34F100LRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 35A TO264 |
|
FDFS2P103Rochester Electronics |
MOSFET P-CH 30V 5.3A 8SOIC |
|
IRF2804STRL7PPIR (Infineon Technologies) |
MOSFET N-CH 40V 160A D2PAK |
|
SVD5867NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A DPAK-3 |
|
PSMN010-80YLXNexperia |
MOSFET N-CH 80V 84A LFPAK56 |
|
PSMN008-75B,118Nexperia |
MOSFET N-CH 75V 75A D2PAK |