English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQP120N06-6M7_GE3Vishay / Siliconix |
MOSFET N-CH 60V TO220AB |
|
IRF133Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP075N15N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 100A TO220-3 |
|
PSMN2R4-30MLDXNexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
FDPF18N20FT-GRochester Electronics |
MOSFET N-CH 200V 18A TO220F |
|
IPSA70R1K4CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 5.4A TO251-3 |
|
TSM60N600CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 8A TO251 |
|
BSS138Q-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 200MA SOT23-3 |
|
PSMN3R3-40MLHXNexperia |
MOSFET N-CH 40V 118A LFPAK33 |
|
IXFH7N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 7A TO247 |
|
NVTFS4824NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.2A 8WDFN |
|
IRLS3036TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A D2PAK |
|
SIE832DF-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 50A 10POLARPAK |
