MOSFET N-CH 600V 11.5A 4DFN
DC DC CONVERTER 12V 3W
MOSFET N-CH 900V 36A TO247-3
类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 900 V |
电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 120mOhm @ 26A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 2.9mA |
栅极电荷 (qg) (max) @ vgs: | 270 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6800 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 417W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF610STRRVishay / Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
|
DMG4N60SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 3.7A TO252 T&R |
|
IRL3716LPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 180A TO262 |
|
TPC8038-H(TE12L,Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 12A 8SOP |
|
STB70NFS03LT4STMicroelectronics |
MOSFET N-CH 30V 70A D2PAK |
|
BSP295E6327IR (Infineon Technologies) |
MOSFET N-CH 60V 1.8A SOT223-4 |
|
FQD10N20TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK |
|
BSP295E6327TIR (Infineon Technologies) |
MOSFET N-CH 60V 1.8A SOT223-4 |
|
IRFU224Vishay / Siliconix |
MOSFET N-CH 250V 3.8A TO251AA |
|
IRFR3710ZTRIR (Infineon Technologies) |
MOSFET N-CH 100V 42A DPAK |
|
BS170RLRPSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
|
AON6554Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 30V 36A 8DFN |
|
NTD4860NAT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 10.4A/65A DPAK |