English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9.4mOhm @ 53A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 110 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3270 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 170W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFH5207TRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 13A/71A 8PQFN |
|
RJK6025DPD-00#J2Renesas Electronics America |
MOSFET N-CH 600V 1A MP3A |
|
MTM231100LPanasonic |
MOSFET P-CH 12V 4A SMINI3-G1 |
|
FQA48N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 48A TO3P |
|
IPD042P03L3GBTMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 70A TO252-3 |
|
3N163Vishay / Siliconix |
MOSFET P-CH 40V 50MA TO72 |
|
PHP34NQ11T,127NXP Semiconductors |
MOSFET N-CH 110V 35A TO220AB |
|
BS250PSTZZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 45V 230MA E-LINE |
|
STB140N4F6STMicroelectronics |
MOSFET N-CH 40V 80A D2PAK |
|
RSS060P05FU6TBROHM Semiconductor |
MOSFET P-CH 45V 6A 8SOP |
|
SI1413EDH-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.3A SC70-6 |
|
AON6454A_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 8DFN |
|
IXTP1R4N60PWickmann / Littelfuse |
MOSFET N-CH 600V 1.4A TO220AB |
