English
简体中文
MOSFET N-CH 55V 280A PLUS-220SMD
MOSFET N-CH 60V 84A TO262
IC REG LIN -10.5V 200MA SOT89-5
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 280A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.2mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 550W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PLUS-220SMD |
| 包/箱: | PLUS-220SMD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STT5PF20VSTMicroelectronics |
MOSFET P-CH 20V 5A SOT23-6 |
|
SPB80N03S2L-06IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO263-3 |
|
BS107GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 250MA TO92-3 |
|
IRFB23N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 24A TO220AB |
|
IRF6720S2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 11A DIRECTFET |
|
IRF6614TR1IR (Infineon Technologies) |
MOSFET N-CH 40V 12.7A DIRECTFET |
|
NTB60N06GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 60A D2PAK |
|
BVSS84LT3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 130MA SOT-23-3 |
|
SI1413EDH-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 2.3A SC70-6 |
|
IRF7706TRIR (Infineon Technologies) |
MOSFET P-CH 30V 7A 8TSSOP |
|
NVF3055-100T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
NVMFS5C404NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
|
IRF6215L-103IR (Infineon Technologies) |
MOSFET P-CH 150V 13A TO262 |