类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4V, 5V |
rds on (max) @ id, vgs: | 160mOhm @ 9A, 5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28 nC @ 5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 930 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-262-3 |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
NTD6600NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A DPAK |
![]() |
BSS126 E6906IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
![]() |
RJK4512DPE-00#J3Renesas Electronics America |
MOSFET N-CH 450V 14A 4LDPAK |
![]() |
IXFN180N07Wickmann / Littelfuse |
MOSFET N-CH 70V 180A SOT-227B |
![]() |
IRFIB8N50KPBFVishay / Siliconix |
MOSFET N-CH 500V 6.7A TO220-3 |
![]() |
BSN254A,126NXP Semiconductors |
MOSFET N-CH 250V 310MA TO92-3 |
![]() |
TPC6012(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 6A VS-6 |
![]() |
STF30NM60NSTMicroelectronics |
MOSFET N-CH 600V 25A TO220FP |
![]() |
2SK1775-ERenesas Electronics America |
MOSFET N-CH 900V 8A TO3P |
![]() |
AOD4136LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 25V 25A TO252-3 |
![]() |
IRFR020TRVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
![]() |
BSP170PE6327IR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
![]() |
IRLR3103TRLIR (Infineon Technologies) |
MOSFET N-CH 30V 55A DPAK |