English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 47A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 22mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 48 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 110W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RRS100N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 10A 8SOP |
|
FQD3N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A DPAK |
|
SI2302ADS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 2.1A SOT23-3 |
|
NVD5414NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 24A DPAK |
|
STI19NM65NSTMicroelectronics |
MOSFET N-CH 650V 15.5A I2PAK |
|
STP60NF03LSTMicroelectronics |
MOSFET N-CH 30V 60A TO220AB |
|
TK20C60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A I2PAK |
|
IXTT16P20Wickmann / Littelfuse |
MOSFET P-CH 200V 16A TO268 |
|
APT50N60JCU2Microsemi |
MOSFET N-CH 600V 52A SOT227 |
|
FDS8449-F085PSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 7.6A 8SOIC |
|
NTHD5904NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2.5A CHIPFET |
|
IRF4905SPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 42A D2PAK |
|
SI3459DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 60V 2.2A 6TSOP |
