English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7Ohm @ 840mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 229 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 36W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTGS3446T1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2.5A 6TSOP |
|
RJK6002DPH-E0#T2Renesas Electronics America |
MOSFET N-CH 600V 2A TO251 |
|
IPU04N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
|
IRF1010NLIR (Infineon Technologies) |
MOSFET N-CH 55V 85A TO262 |
|
AOTF12T60PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 12A TO220-3F |
|
DMS2085LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.3A 8SO |
|
IXFH6N90Wickmann / Littelfuse |
MOSFET N-CH 900V 6A TO247AD |
|
IXFK35N50Wickmann / Littelfuse |
MOSFET N-CH 500V 35A TO264AA |
|
SIE854DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A 10POLARPAK |
|
APT53N60SC6Microsemi |
MOSFET N-CH 600V 53A D3PAK |
|
STB25NM60NSTMicroelectronics |
MOSFET N-CH 600V 21A D2PAK |
|
IXFE48N50QD3Wickmann / Littelfuse |
MOSFET N-CH 500V 41A SOT-227B |
|
NTB4302T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 74A D2PAK |
