English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 450mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 31 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 850 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 90W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AON2701L#AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 3A 6DFN |
|
IRF7701GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 12V 10A 8TSSOP |
|
BUK961R4-30E,118NXP Semiconductors |
MOSFET N-CH 30V 120A D2PAK |
|
IPP80N06S3L-08IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
|
IRF3707LIR (Infineon Technologies) |
MOSFET N-CH 30V 62A TO262 |
|
BUZ11_R4941Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 30A TO220-3 |
|
SI1472DH-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 5.6A SC70-6 |
|
PSMN009-100W,127NXP Semiconductors |
MOSFET N-CH 100V 100A TO247-3 |
|
BSS314PEL6327HTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 1.5A SOT23-3 |
|
SI3445DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 6TSOP |
|
BSN304,126NXP Semiconductors |
MOSFET N-CH 300V 300MA TO92-3 |
|
IRFR5410TRIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
|
TP0610KL-TR1-E3Vishay / Siliconix |
MOSFET P-CH 60V 270MA TO226AA |
