English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerRF™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 10.5A, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 77 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXFH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMS7694_SN00176Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13.2A/20A 8PQFN |
|
RP1E075RPTRROHM Semiconductor |
MOSFET P-CH 30V 7.5A MPT6 |
|
IPD10N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO252-3 |
|
CPH6354-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 4A 6CPH |
|
SI5410DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 12A PPAK |
|
IRFP460AVishay / Siliconix |
MOSFET N-CH 500V 20A TO247-3 |
|
94-2110IR (Infineon Technologies) |
MOSFET N-CH 40V 162A D2PAK |
|
IXTH36P10Wickmann / Littelfuse |
MOSFET P-CH 100V 36A TO247 |
|
PHB20NQ20T,118Nexperia |
MOSFET N-CH 200V 20A D2PAK |
|
IRF7807D1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
|
IRF3711LIR (Infineon Technologies) |
MOSFET N-CH 20V 110A TO262 |
|
APT30N60KC6Microsemi |
MOSFET N-CH 600V 30A TO220 |
|
IXFK55N50Wickmann / Littelfuse |
MOSFET N-CH 500V 55A TO264AA |
