English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta), 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.8mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 16 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1050 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 27W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (3x3) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI4486EY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 5.4A 8SO |
|
NVMFS6B25NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8A/33A 5DFN |
|
MGSF1P02LT1Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 750MA SOT23-3 |
|
IRFI520NIR (Infineon Technologies) |
MOSFET N-CH 100V 7.6A TO220AB FP |
|
NVMFS5C468NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
STK850STMicroelectronics |
MOSFET N-CH 30V 30A POLARPAK |
|
IRFL1006TRIR (Infineon Technologies) |
MOSFET N-CH 60V 1.6A SOT223 |
|
FDMC7692_F126Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13.3A/16A 8MLP |
|
AO7414_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 2A SC70-3 |
|
MTW32N20ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 32A TO247 |
|
IRF7811AVTRIR (Infineon Technologies) |
MOSFET N-CH 30V 10.8A 8SO |
|
IPB100N06S3-03IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
SPD03N60C3BTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A DPAK |
