English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 54 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFL024NTRIR (Infineon Technologies) |
MOSFET N-CH 55V 2.8A SOT223 |
|
STL80N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A POWERFLAT |
|
DMT6012LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10.4A 8SO |
|
SI2308DS-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 2A SOT23-3 |
|
R6530KNX3C16ROHM Semiconductor |
MOSFET N-CH 650V 30A TO220AB |
|
IRFR12N25DCTRRPIR (Infineon Technologies) |
MOSFET N-CH 250V 14A DPAK |
|
VN10LPSTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA E-LINE |
|
FDD24AN06LA0_SB82179Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.1A/40A TO252AA |
|
SUP75P03-07-E3Vishay / Siliconix |
MOSFET P-CH 30V 75A TO220AB |
|
APT50M80B2VRGMicrosemi |
MOSFET N-CH 500V 58A T-MAX |
|
IRFP4232PBFIR (Infineon Technologies) |
MOSFET N-CH 250V 60A TO247AC |
|
2SK2962,T6F(JToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH TO92MOD |
|
2N7002_S00ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT-23 |
