English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 83A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 15mOhm @ 33A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 107 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 4530 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 330W (Tc) |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO4407AL_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 12A 8SOIC |
|
IXTH200N075TWickmann / Littelfuse |
MOSFET N-CH 75V 200A TO247 |
|
FQPF10N60C_F105Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9.5A TO220F |
|
IRFBF30SVishay / Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
|
AON4407LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 9A 8DFN |
|
STD85N3LH5STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
NTD32N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A DPAK |
|
AON6450LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8DFN |
|
IPP35CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 27A TO220-3 |
|
AOT5N50_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5A TO220-3 |
|
IRLR3714TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A DPAK |
|
AUIRLL024NIR (Infineon Technologies) |
MOSFET N-CH 55V 3.1A SOT-223 |
|
SI4320DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A 8SO |
